Comparative analysis of selective area grown Ga- and N-polar InGaN/GaN nanowires for quantum emitters

Comparative analysis of selective area grown Ga- and N-polar InGaN/GaN nanowires for quantum emitters

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In this paper, we report the molecular beam epitaxy-grown InGaN-quantum disks embedded within selective area epitaxy of GaN nanowires with both Ga- and N-polarities.A detailed merlot redbud tree for sale comparative analysis of these two types of nanostructures is also provided.Compared to Ga-polar nanowires, N-polar nanowires are found to exhibit a higher vertical growth rate, flatter top, and reduced lateral overgrowth.

InGaN quantum disk-related optical emission is observed from nanowires with both polarities; however, the N-polar structures inherently emit at longer wavelengths due to higher indium incorporation.Considering that N-polar nanowires offer peperomia double duty more compelling geometry control compared to Ga-polar ones, we focus on the theoretical analysis of only N-polar structures to realize high-performance quantum emitters.A single nanowire-level analysis was performed, and the effects of nanowire diameter, taper length, and angle on guided modes, light extraction, and far-field emission were investigated.

These findings highlight the importance of tailoring nanowire geometry and eventually optimizing the growth processes of III-nitride nanostructures.